bcx 51 ... bcx 53 sep-30-1999 1 pnp silicon af transistors ? for af driver and output stages ? high collector current ? low collector-emitter saturation voltage ? complementary types: bcx 54 ... bcx 56 (npn) 2 1 3 vps05162 2 type marking pin configuration package bcx 51 bcx 51-10 bcx 51-16 bcx 52 bcx 52-10 bcx 52-16 bcx 53 bcx 53-10 bcx 53-16 aa ac ad ae ag am ah ak al 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 2 = c 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e 3 = e sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89 sot-89
bcx 51 ... bcx 53 sep-30-1999 2 maximum ratings parameter bcx 51 symbol bcx 53 unit bcx 52 v ceo 45 80 v 60 collector-emitter voltage 100 60 45 v cbo collector-base voltage emitter-base voltage v ebo 5 5 5 dc collector current i c 1 a 1.5 peak collector current i cm base current i b ma 100 i bm 200 peak base current w p tot total power dissipation , t s = 130 c 1 junction temperature 150 c t j t st g -65 ... 150 storage temperature thermal resistance k/w junction ambient 1) r thja 75 junction - soldering point r thjs 20 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcx 51 ... bcx 53 sep-30-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values max. min. typ. dc characteristics - - - collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo - - - 45 60 80 bxp 51 bxp 52 bxp 53 v - - - - - - 45 60 100 bxp 51 bxp 52 bxp 53 v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 v (br)ebo 5 - - emitter-base breakdown voltage i e = 10 a, i c = 0 collector cutoff current v cb = 30 v, i e = 0 na - i cbo 100 - collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c a - i cbo 20 - - dc current gain 1) i c = 5 ma, v ce = 2 v - h fe - 25 - 250 160 250 dc current gain 1) i c = 150 ma, v ce = 2 v h fe - 100 160 40 63 100 bcx51...53 hfe-grp. 10 hfe-grp. 16 - 25 h fe - dc current gain 1) i c = 500 ma, v ce = 2 v 0.5 v v cesat - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma - v be(on) - - 1 base-emitter voltage 1) i c = 500 ma, v ce = 2 v ac characteristics - mhz f t - transition frequency i c = 50 ma, v ce = 10 v, f = 20 mhz 125 1) pulse test: t 300 s, d = 2%
bcx 51 ... bcx 53 sep-30-1999 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00436 bcx 51...53 150 50 100 ?c t as t 0.2 0.4 0.6 0.8 1.0 w 1.2 p tot t t ; as collector current i c = f ( v be ) v ce = 2v 10 0 0.6 bcx 51...53 ehp00437 v be 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c transition frequency f t = f ( i c ) v ce = 10v 10 10 10 10 bcx 51...53 ehp00439 f ma mhz 01 23 5 t 3 10 10 2 1 10 5 5 5 c permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00438 bcx 51...53 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
bcx 51 ... bcx 53 sep-30-1999 5 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 0.4 0.8 bcx 51...53 ehp00441 v ce sat v ma 10 4 1 10 10 10 2 10 10 3 10 c 5 5 5 10 0 0.2 0.6 100 25 -50 ? c ? c ? c dc current gain h fe = f ( i c ) v ce = 2v 10 10 10 10 bcx 51...53 ehp00440 h ma 0 1 34 fe 3 10 10 2 0 10 5 5 10 1 2 10 5 100 25 -50 555 c ? c ? c ? c collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 bcx 51...53 ehp00442 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ ? c base-emitter saturation voltage i c = f (v besat ), h fe = 10 10 0 0.6 bcx 51...53 ehp00443 v be sat 10 ma 10 10 10 4 3 2 1 0 5 5 5 v 0.2 0.4 0.8 1.0 1.2 100 25 -50 c ? c ? c ? c
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